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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) *Good Linearity of hFE *Complement to Type 2SB1052 APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 60 V 60 V 6 V 2 A 4 A 25 W UNIT .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 2 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 30mA; IB= 0 IC= 2A; IB= 0.2A B 2SD1480 MIN 60 TYP. MAX UNIT V 2.0 1.2 200 1 35 V V A IC= 1A; VCE= 4V VCE= 60V; VBE= 0 VEB= 6V; IC= 0 mA Switching times Turn-on Time Storage Time Fall Time ton tstg tf w w P 120-250 w. .cn mi cse is IC= 0.1A; VCE= 4V IC= 1A; VCE= 4V 40 IC= 1A; IB1= -IB2= 0.1A 250 0.2 3.5 0.7 s s s hFE-1 classifications R 40-90 Q 70-150 isc Websitewww.iscsemi.cn 2 |
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